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  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Transistor N-MOSFET, unipolar, 650V, 21.9A, 313W, PG-TO247-3  [Είσοδος
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Transistor N-FET - Transistor  N-JFET, unipolar, 35V, 2mA, 0.625W, TO92, Igt  50mA
Transistor N-FET - Transistor N-JFET, unipolar, 35V, 2mA, 0.625W, TO92, Igt 50mA
Τελική: 2.26 €
     
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Transistor N-FET - Transistor  N-MOSFET, unipolar, 500V, 8A, Idm  52A, 48W, TO220FP
Transistor N-FET - Transistor N-MOSFET, unipolar, 500V, 8A, Idm 52A, 48W, TO220FP
Τελική: 4.32 €
     
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Transistor N-MOSFET - Transistor N-MOSFET, unipolar, 650V, 21.9A, 313W, PG-TO247-3

Κωδικός: 37576

SPW35N60C3 PDF

SPW35N60C3

Τιμή χωρίς ΦΠΑ:  13.51 €
Αξία ΦΠΑ:  3.24 €
Τελική με ΦΠΑ:  16.75 €
Ποσότητα:   
* Αποστολή σε 2-3 εργάσιμες ημέρες.
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology CoolMOS™
Polarisation unipolar
Drain-source voltage 650V
Drain current 21.9A
Power dissipation 313W
Case PG-TO247-3
Gate-source voltage ±20V
On-state resistance 0.1Ω
Mounting THT
Kind of package tube
Kind of channel enhanced
Gross weight 6.2 g
 
Διαθεσιμότητα: Με παραγγελία
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Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
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