Specifications |
Manufacturer |
INFINEON TECHNOLOGIES |
Type of transistor |
N-MOSFET |
Technology |
OptiMOS™ 3 |
Polarisation |
unipolar |
Drain-source voltage |
60V |
Drain current |
90A |
Power dissipation |
188W |
Case |
PG-TO262-3 |
Gate-source voltage |
±20V |
On-state resistance |
4mΩ |
Mounting |
THT |
Kind of channel |
enhanced |
Gross weight |
1.54 g |
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