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  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Transistor N-MOSFET, unipolar, 60V, 90A, 188W, PG-TO220-3  [Είσοδος
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Transistor N-MOSFET - Transistor  N-MOSFET, MDmesh™ ||, unipolar, 600V, 6.93A, 25W
Transistor N-MOSFET - Transistor N-MOSFET, MDmesh™ ||, unipolar, 600V, 6.93A, 25W
Τελική: 2.79 €
     
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FET - Module, single transistor, 40V, 660A, SOT227B, Ugs  ±15V, screw
FET - Module, single transistor, 40V, 660A, SOT227B, Ugs ±15V, screw
Τελική: 36.77 €
     
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Transistor N-FET - Transistor N-MOSFET, unipolar, 60V, 90A, 188W, PG-TO220-3

Κωδικός: 37585

IPP040N06N3GXKSA1 PDF

IPP040N06N3GXKSA1

Τιμή χωρίς ΦΠΑ:  2.45 €
Αξία ΦΠΑ:  0.59 €
Τελική με ΦΠΑ:  3.03 €
Ποσότητα:   
* Αποστολή σε 2-3 εργάσιμες ημέρες.
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™ 3
Polarisation unipolar
Drain-source voltage 60V
Drain current 90A
Power dissipation 188W
Case PG-TO220-3
Gate-source voltage ±20V
On-state resistance 4mΩ
Mounting THT
Kind of package tube
Kind of channel enhanced
Gross weight 2.07 g
 
Διαθεσιμότητα: Με παραγγελία
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Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TOSHIBA | VISHAY
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