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  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Transistor N-MOSFET, unipolar, 60V, 80A, 107W, PG-TO220-3  [Είσοδος
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Transistor N-MOSFET - Transistor  N-MOSFET, MDmesh™ ||, unipolar, 600V, 6.93A, 25W
Transistor N-MOSFET - Transistor N-MOSFET, MDmesh™ ||, unipolar, 600V, 6.93A, 25W
Τελική: 2.79 €
     
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Transistor N-FET - Transistor  N-MOSFET, unipolar, 600V, 20A, 192W, TO220FP
Transistor N-FET - Transistor N-MOSFET, unipolar, 600V, 20A, 192W, TO220FP
Τελική: 4.94 €
     
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Transistor N-FET - Transistor N-MOSFET, unipolar, 60V, 80A, 107W, PG-TO220-3

Κωδικός: 37760

IPP060N06NAKSA1 PDF

IPP060N06NAKSA1

Τιμή χωρίς ΦΠΑ:  1.99 €
Αξία ΦΠΑ:  0.48 €
Τελική με ΦΠΑ:  2.46 €
Ποσότητα:   
Προειδοποίηση Μεγάλος χρόνος παράδοσης
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™
Polarisation unipolar
Drain-source voltage 60V
Drain current 80A
Power dissipation 107W
Case PG-TO220-3
Gate-source voltage ±20V
On-state resistance 6mΩ
Mounting THT
Kind of package tube
Kind of channel enhanced
Gross weight 2.037 g
 
Διαθεσιμότητα: Με παραγγελία
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Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TOSHIBA | VISHAY
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