Specifications |
Manufacturer |
INFINEON TECHNOLOGIES |
Type of transistor |
N-MOSFET |
Technology |
OptiMOS™ 3 |
Polarisation |
unipolar |
Drain-source voltage |
60V |
Drain current |
100A |
Power dissipation |
83W |
Case |
PG-TDSON-8 |
Gate-source voltage |
±20V |
On-state resistance |
2.8mΩ |
Mounting |
SMD |
Kind of channel |
enhanced |
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