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  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Transistor N-MOSFET, unipolar, 60V, 100A, 83W, PG-TDSON-8  [Είσοδος
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Transistor N-FET - Transistor  N-MOSFET, unipolar, 30V, 4.7A, 1.4W, SOT23
Transistor N-FET - Transistor N-MOSFET, unipolar, 30V, 4.7A, 1.4W, SOT23
Τελική: 0.18 €
     
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Transistor P-FET - Transistor  P-MOSFET x2, unipolar, -60V, -2.9A, 2W, SO8
Transistor P-FET - Transistor P-MOSFET x2, unipolar, -60V, -2.9A, 2W, SO8
Τελική: 1.40 €
     
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Transistor N-FET - Transistor N-MOSFET, unipolar, 60V, 100A, 83W, PG-TDSON-8

Κωδικός: 40938

BSC028N06NS-DTE.pdf PDF 

BSC028N06NSATMA1

Τιμή χωρίς ΦΠΑ:  2.65 €
Αξία ΦΠΑ:  0.64 €
Τελική με ΦΠΑ:  3.29 €
Ποσότητα:   
* Αποστολή σε 2-3 εργάσιμες ημέρες.
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™ 3
Polarisation unipolar
Drain-source voltage 60V
Drain current 100A
Power dissipation 83W
Case PG-TDSON-8
Gate-source voltage ±20V
On-state resistance 2.8mΩ
Mounting SMD
Kind of channel enhanced
 
Διαθεσιμότητα: Με παραγγελία
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Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
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