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  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Transistor N-MOSFET, unipolar, 60V, 100A, 167W, PG-TO252-3  [Είσοδος
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Transistor N-MOSFET - Transistor  N-MOSFET, MDmesh™ ||, unipolar, 600V, 6.93A, 25W
Transistor N-MOSFET - Transistor N-MOSFET, MDmesh™ ||, unipolar, 600V, 6.93A, 25W
Τελική: 2.79 €
     
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FET - Transistor  N-MOSFET x2, unipolar, 30V, 6.5A, 1.3W, SO8
FET - Transistor N-MOSFET x2, unipolar, 30V, 6.5A, 1.3W, SO8
Τελική: 0.98 €
     
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Transistor N-FET - Transistor N-MOSFET, unipolar, 60V, 100A, 167W, PG-TO252-3

Κωδικός: 35752

IPD031N06L3GATMA1 PDF

IPD031N06L3GATMA1

Τιμή χωρίς ΦΠΑ:  3.05 €
Αξία ΦΠΑ:  0.73 €
Τελική με ΦΠΑ:  3.78 €
Ποσότητα:   
* Αποστολή σε 2-3 εργάσιμες ημέρες.
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology OptiMOS™ 3
Polarisation unipolar
Drain-source voltage 60V
Drain current 100A
Power dissipation 167W
Case PG-TO252-3
Gate-source voltage ±20V
On-state resistance 3.1mΩ
Mounting SMD
Kind of channel enhanced
Gross weight 0.42 g
 
Διαθεσιμότητα: Με παραγγελία
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Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TOSHIBA | VISHAY
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