Specifications |
Manufacturer |
INFINEON TECHNOLOGIES |
Type of transistor |
N-MOSFET |
Technology |
OptiMOS™ 3 |
Polarisation |
unipolar |
Drain-source voltage |
60V |
Drain current |
100A |
Power dissipation |
167W |
Case |
PG-TO252-3 |
Gate-source voltage |
±20V |
On-state resistance |
3.1mΩ |
Mounting |
SMD |
Kind of channel |
enhanced |
Gross weight |
0.42 g |
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