Specifications |
Manufacturer |
INFINEON TECHNOLOGIES |
Type of transistor |
N-MOSFET |
Technology |
OptiMOS™ |
Polarisation |
unipolar |
Drain-source voltage |
55V |
Drain current |
80A |
Power dissipation |
210W |
Case |
PG-TO263-3 |
Gate-source voltage |
±20V |
On-state resistance |
6.7mΩ |
Mounting |
SMD |
Gate charge |
95nC |
Kind of channel |
enhanced |
Gross weight |
1.706 g |
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