Specifications |
Manufacturer |
INFINEON TECHNOLOGIES |
Type of transistor |
N-MOSFET |
Technology |
HEXFET® |
Polarisation |
unipolar |
Drain-source voltage |
55V |
Drain current |
4A |
Pulsed drain current |
40A |
Power dissipation |
1W |
Case |
SOT223 |
Gate-source voltage |
±16V |
On-state resistance |
60mΩ |
Mounting |
SMD |
Gate charge |
11nC |
Kind of package |
reel |
Kind of channel |
enhanced |
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