Specifications |
Manufacturer |
INFINEON TECHNOLOGIES |
Type of transistor |
N-MOSFET |
Technology |
HEXFET® |
Polarisation |
unipolar |
Drain-source voltage |
55V |
Drain current |
30A |
Pulsed drain current |
160A |
Power dissipation |
110W |
Case |
DPAK |
Gate-source voltage |
±16V |
On-state resistance |
27mΩ |
Mounting |
SMD |
Gate charge |
48nC |
Kind of package |
reel |
Kind of channel |
enhanced |
Features of semiconductor devices |
logic level |
Gross weight |
0.392 g |
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