|
Specifications |
| Manufacturer |
INFINEON TECHNOLOGIES |
| Type of transistor |
N-MOSFET |
| Technology |
HEXFET® |
| Polarisation |
unipolar |
| Drain-source voltage |
55V |
| Drain current |
30A |
| Pulsed drain current |
160A |
| Power dissipation |
110W |
| Case |
DPAK |
| Gate-source voltage |
±16V |
| On-state resistance |
27mΩ |
| Mounting |
SMD |
| Gate charge |
48nC |
| Kind of package |
reel |
| Kind of channel |
enhanced |
| Features of semiconductor devices |
logic level |
| Gross weight |
0.392 g |
| |
|
Αισθητήρια
Hμιαγωγοί
DC-DC Converters
Καθαριστικά - Χημικά
