Specifications |
Manufacturer |
Infineon (IRF) |
Type of transistor |
N-MOSFET |
Technology |
HEXFET® |
Polarisation |
unipolar |
Drain-source voltage |
55V |
Drain current |
133A |
Power dissipation |
200W |
Case |
TO220AB |
Gate-source voltage |
±20V |
On-state resistance |
5.3mΩ |
Mounting |
THT |
Gate charge |
170nC |
Kind of package |
tube |
Gross weight |
1.967 g |
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