Specifications |
Manufacturer |
NTE Electronics |
Type of transistor |
N-MOSFET |
Polarisation |
unipolar |
Drain-source voltage |
500V |
Drain current |
5.1A |
Pulsed drain current |
32A |
Power dissipation |
125W |
Case |
TO220 |
Gate-source voltage |
±20V |
On-state resistance |
0.85Ω |
Mounting |
THT |
Kind of channel |
enhanced |
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