Specifications |
Manufacturer |
ONSEMI |
Type of transistor |
N-MOSFET |
Technology |
DMOS, UniFET™ |
Polarisation |
unipolar |
Drain-source voltage |
500V |
Drain current |
12.9A |
Pulsed drain current |
80A |
Power dissipation |
250W |
Case |
TO220-3 |
Gate-source voltage |
±30V |
On-state resistance |
0.26Ω |
Mounting |
THT |
Gate charge |
65nC |
Kind of package |
tube |
Kind of channel |
enhanced |
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