Specifications |
Manufacturer |
TEXAS INSTRUMENTS |
Type of transistor |
N-MOSFET |
Technology |
NexFET™ |
Polarisation |
unipolar |
Drain-source voltage |
40V |
Drain current |
100A |
Power dissipation |
115W |
Case |
TO220-3 |
Gate-source voltage |
±20V |
On-state resistance |
5.5mΩ |
Mounting |
THT |
Gate charge |
19nC |
Kind of package |
tube |
Heatsink thickness |
1.14...1.4mm |
Gross weight |
1.987 g |
|
|