Specifications |
Manufacturer |
ONSEMI |
Type of transistor |
N-MOSFET |
Polarisation |
unipolar |
Drain-source voltage |
400V |
Drain current |
13.8A |
Pulsed drain current |
92A |
Power dissipation |
235W |
Case |
TO3PN |
Gate-source voltage |
±30V |
On-state resistance |
0.19Ω |
Mounting |
THT |
Gate charge |
60nC |
Kind of package |
tube |
Kind of channel |
enhanced |
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