Specifications |
Manufacturer |
INFINEON TECHNOLOGIES |
Type of transistor |
N-MOSFET |
Technology |
HEXFET® |
Polarisation |
unipolar |
Drain-source voltage |
30V |
Drain current |
61A |
Pulsed drain current |
340A |
Power dissipation |
75W |
Case |
DPAK |
Gate-source voltage |
±20V |
On-state resistance |
5.8mΩ |
Mounting |
SMD |
Kind of channel |
enhancement |
|
|