Specifications |
Manufacturer |
ONSEMI |
Type of transistor |
N-MOSFET |
Technology |
PowerTrench® |
Polarisation |
unipolar |
Drain-source voltage |
30V |
Drain current |
18A |
Power dissipation |
2.5W |
Case |
SO8 |
Gate-source voltage |
±20V |
On-state resistance |
7.2mΩ |
Mounting |
SMD |
Gate charge |
112nC |
Kind of package |
reel,   tape |
Kind of channel |
enhanced |
Gross weight |
0.109 g |
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