Specifications |
Manufacturer |
ONSEMI |
Type of transistor |
N-MOSFET |
Polarisation |
unipolar |
Drain-source voltage |
300V |
Drain current |
35A |
Pulsed drain current |
236A |
Power dissipation |
500W |
Case |
TO3PN |
Gate-source voltage |
±30V |
On-state resistance |
56mΩ |
Mounting |
THT |
Gate charge |
0.1µC |
Kind of package |
tube |
Kind of channel |
enhanced |
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