Specifications |
Manufacturer |
INFINEON TECHNOLOGIES |
Type of transistor |
N-MOSFET |
Technology |
HEXFET |
Polarisation |
unipolar |
Drain-source voltage |
25V |
Drain current |
5.8A |
Power dissipation |
1.25W |
Case |
SOT23 |
Gate-source voltage |
20V |
On-state resistance |
24m |
Mounting |
SMD |
Gate charge |
5.4nC |
Kind of channel |
enhanced |
Gross weight |
0.023 g |
Prepack information |
Reel = 3000 pcs |
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