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  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Transistor N-MOSFET, unipolar, 250V, 100mA, 360mW, SOT23, SIPMOS™  [Είσοδος
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Transistor N-FET - Transistor  N-JFET, unipolar, 35V, 2mA, 0.625W, TO92, Igt  50mA
Transistor N-FET - Transistor N-JFET, unipolar, 35V, 2mA, 0.625W, TO92, Igt 50mA
Τελική: 2.26 €
     
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Transistor P-FET - Transistor  P-MOSFET x2, unipolar, -60V, -2.9A, 2W, SO8
Transistor P-FET - Transistor P-MOSFET x2, unipolar, -60V, -2.9A, 2W, SO8
Τελική: 1.40 €
     
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Transistor N-FET - Transistor N-MOSFET, unipolar, 250V, 100mA, 360mW, SOT23, SIPMOS™

Κωδικός: 29998

BSS139H6327XTSA1 PDF

BSS139H6327XTSA1

Τιμή χωρίς ΦΠΑ:  0.45 €
Αξία ΦΠΑ:  0.11 €
Τελική με ΦΠΑ:  0.56 €
Ποσότητα:   
* Αποστολή σε 2-3 εργάσιμες ημέρες.
Specifications
Manufacturer INFINEON TECHNOLOGIES
Transistor type N-MOSFET
Polarisation unipolar
Drain-source voltage 250V
Drain current 100mA
Power 360mW
Case SOT23
Gate-source voltage ±20V
On-state resistance 30Ω
Mounting SMD
Technology SIPMOS™
 
Διαθεσιμότητα: Με παραγγελία
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Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
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