Specifications |
Manufacturer |
INFINEON TECHNOLOGIES |
Type of transistor |
N-MOSFET |
Technology |
HEXFET® |
Polarisation |
unipolar |
Drain-source voltage |
24V |
Drain current |
429A |
Power dissipation |
300W |
Case |
D2PAK-7 |
Gate-source voltage |
±20V |
On-state resistance |
1mΩ |
Mounting |
SMD |
Gate charge |
180nC |
Kind of channel |
enhanced |
Gross weight |
1.56 g |
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