Specifications |
Manufacturer |
ONSEMI |
Type of transistor |
N-MOSFET |
Technology |
QFET® |
Polarisation |
unipolar |
Drain-source voltage |
200V |
Drain current |
17.8A |
Power dissipation |
156W |
Case |
TO220AB |
Gate-source voltage |
±30V |
On-state resistance |
82mΩ |
Mounting |
THT |
Gate charge |
110nC |
Kind of package |
tube |
Kind of channel |
enhanced |
Gross weight |
2.04 g |
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