Specifications |
Manufacturer |
IXYS |
Type of transistor |
N-MOSFET |
Polarisation |
unipolar |
Drain-source voltage |
150V |
Drain current |
180A |
Power dissipation |
830W |
Case |
TO264 |
On-state resistance |
11mΩ |
Mounting |
THT |
Gate charge |
240nC |
Kind of package |
tube |
Kind of channel |
enhanced |
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