Specifications |
Manufacturer |
INFINEON TECHNOLOGIES |
Type of transistor |
N-MOSFET |
Technology |
HEXFET® |
Polarisation |
unipolar |
Drain-source voltage |
100V |
Drain current |
9.1A |
Power dissipation |
39W |
Case |
DPAK |
Mounting |
SMD |
Kind of package |
reel |
Kind of channel |
enhanced |
Gross weight |
0.465 g |
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