Specifications |
Manufacturer |
IXYS |
Type of transistor |
N-MOSFET |
Polarisation |
unipolar |
Drain-source voltage |
100V |
Drain current |
360A |
Power dissipation |
1.25kW |
Case |
TO264 |
On-state resistance |
2.9m |
Mounting |
THT |
Gate charge |
525nC |
Kind of package |
tube |
Kind of channel |
enhanced |
Features of semiconductor devices |
thrench gate power mosfet |
Gross weight |
9.825 g |
Prepack information |
Tube = 25 pcs |
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