Specifications |
Manufacturer |
IXYS |
Type of transistor |
N-MOSFET |
Polarisation |
unipolar |
Drain-source voltage |
100V |
Drain current |
200A |
Power dissipation |
830W |
Case |
TO264 |
On-state resistance |
7.5mΩ |
Mounting |
THT |
Gate charge |
235nC |
Kind of package |
tube |
Kind of channel |
enhanced |
Gross weight |
9.75 g |
|
|