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: Transistor N-MOSFET, unipolar, 100V, 200A, 550W, TO247-3, 76ns
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Best viewed
FET - Transistor N-MOSFET 75V 80A 200W TO220AB
Final price:
2.52 €
What's New?
Transistor P-FET - Transistor P-MOSFET x2, unipolar, -60V, -3.9A, Idm -32A, 1.2W, SO8
Final price:
1.00 €
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Transistor N-MOSFET - Transistor N-MOSFET, unipolar, 100V, 200A, 550W, TO247-3, 76ns
Prod code:
41570
PDF
IXTH200N10T
Click to enlarge
Price:
7.23 €
VAT:
1.74 €
Final price with tax:
8.97 €
Amount:
Usually shipped within 2-3 business days.
Usually shipped within 2-3 business days.
Specifications
Manufacturer
IXYS
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
100V
Drain current
200A
Power dissipation
550W
Case
TO247-3
On-state resistance
5.5mΩ
Mounting
THT
Gate charge
152nC
Kind of package
tube
Kind of channel
enhanced
Features of semiconductor devices
thrench gate power mosfet
Reverse recovery time
76ns
Availability:
With order
Manufacturers
:
---
|
ADVANCED POWER ELECTRONICS
|
DIODES INCORPORATED
|
DIOTEC SEMICONDUCTOR
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
MICROCHIP TECHNOLOGY
|
NXP
|
ON SEMICONDUCTOR
|
RENESAS
|
ST MICROELECTRONICS
|
TAIWAN SEMICONDUCTOR
|
TEXAS INSTRUMENTS
|
TOSHIBA
|
VISHAY
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