Specifications |
Manufacturer |
IXYS |
Type of transistor |
N-MOSFET |
Polarisation |
unipolar |
Drain-source voltage |
100V |
Drain current |
200A |
Power dissipation |
550W |
Case |
TO247-3 |
On-state resistance |
5.5mΩ |
Mounting |
THT |
Gate charge |
152nC |
Kind of package |
tube |
Kind of channel |
enhanced |
Features of semiconductor devices |
thrench gate power mosfet |
Reverse recovery time |
76ns |
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