Specifications |
Manufacturer |
TOSHIBA |
Type of transistor |
N-MOSFET |
Polarisation |
unipolar |
Drain-source voltage |
100V |
Drain current |
100A |
Power dissipation |
255W |
Case |
TO220AB |
Gate-source voltage |
±20V |
On-state resistance |
2.8mÙ |
Mounting |
THT |
Gate charge |
0.14µC |
Kind of package |
tube |
Kind of channel |
enhancement |
|
|