Specifications |
Manufacturer |
DIODES INCORPORATED |
Type of transistor |
N-MOSFET |
Polarisation |
unipolar |
Drain-source voltage |
100V |
Drain current |
0.9A |
Power dissipation |
0.85W |
Case |
TO92 |
Gate-source voltage |
±20V |
On-state resistance |
0.5Ω |
Mounting |
THT |
Kind of package |
bulk |
Kind of channel |
enhanced |
Gross weight |
0.165 g |
|
|