Specifications |
Manufacturer |
STMicroelectronics |
Type of transistor |
N-MOSFET |
Technology |
SuperMesh™ |
Polarisation |
unipolar |
Drain-source voltage |
1000V |
Drain current |
1.16A |
Power dissipation |
70W |
Case |
DPAK |
Gate-source voltage |
±30V |
On-state resistance |
8500mΩ |
Mounting |
SMD |
Kind of package |
reel,   tape |
Kind of channel |
enhanced |
Features of semiconductor devices |
ESD protected gate |
Gross weight |
0.35 g |
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