Specifications |
Manufacturer |
IXYS |
Type of transistor |
N-MOSFET |
Technology |
Trench™ |
Polarisation |
unipolar |
Drain-source voltage |
100V |
Drain current |
160A |
Power dissipation |
430W |
Case |
TO220AB |
Gate-source voltage |
±20V |
On-state resistance |
7mΩ |
Mounting |
THT |
Gate charge |
132nC |
Kind of package |
tube |
Kind of channel |
enhanced |
Reverse recovery time |
60ns |
Gross weight |
2.033 g |
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