Specifications |
Manufacturer |
IXYS |
Type of transistor |
N-MOSFET |
Technology |
HiPerFET™, Polar3™ |
Polarisation |
unipolar |
Drain-source voltage |
500V |
Drain current |
26A |
Power dissipation |
500W |
Case |
TO247-3 |
Gate-source voltage |
±30V |
On-state resistance |
0.25Ω |
Mounting |
THT |
Gate charge |
42nC |
Kind of package |
tube |
Kind of channel |
enhanced |
Reverse recovery time |
250ns |
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