Specifications |
Manufacturer |
INTERNATIONAL RECTIFIER |
Transistor type |
N-MOSFET |
Polarisation |
unipolar |
Transistor kind |
HEXFET |
Drain-source voltage |
55V |
Drain current |
4.4A |
Power |
2.1W |
Case |
SOT223 |
Gate-source voltage |
16V |
On-state resistance |
65mΩ |
Junction-to-ambient thermal resistance |
120K/W |
Mounting |
SMD |
Gate charge |
10.4nC |
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