Specifications |
Manufacturer |
INTERNATIONAL RECTIFIER |
Transistor type |
N-MOSFET |
Polarisation |
unipolar |
Transistor kind |
HEXFET |
Drain-source voltage |
40V |
Drain current |
160A |
Power |
200W |
Case |
TO220AB |
Gate-source voltage |
20V |
On-state resistance |
4mΩ |
Junction-to-case thermal resistance |
750mK/W |
Mounting |
THT |
Gate charge |
93.3nC |
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