Specifications |
Manufacturer |
INTERNATIONAL RECTIFIER |
Transistor type |
N-MOSFET |
Polarisation |
unipolar |
Transistor kind |
HEXFET |
Drain-source voltage |
60V |
Drain current |
210A |
Power |
300W |
Case |
D2PAK |
Gate-source voltage |
20V |
On-state resistance |
3mŮ |
Junction-to-case thermal resistance |
500mK/W |
Mounting |
SMD |
Gate charge |
120nC |
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