|
Specifications |
| Manufacturer |
INTERNATIONAL RECTIFIER |
| Transistor type |
N-MOSFET |
| Polarisation |
unipolar |
| Transistor kind |
HEXFET |
| Drain-source voltage |
55V |
| Drain current |
4A |
| Power |
2.1W |
| Case |
SOT223 |
| Gate-source voltage |
20V |
| On-state resistance |
75mΩ |
| Junction-to-ambient thermal resistance |
60K/W |
| Mounting |
SMD |
| Gate charge |
12.2nC |
| |
|
Αισθητήρια
Καθαριστικά - Χημικά
