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  Catalog » Semiconductors » Transistor / Fet » FET : Transistor N-MOSFET 30V 9.7A 2.0W SO8  [Log In] 
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FET - Transistor N-MOSFET 30V 260A 290W TO220AB
FET - Transistor N-MOSFET 30V 260A 290W TO220AB
Final price: 4.63 €
     
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Transistor N-FET - Transistor N-MOSFET, unipolar, 55V, 3.7A, 2.1W, SOT223
Transistor N-FET - Transistor N-MOSFET, unipolar, 55V, 3.7A, 2.1W, SOT223
Final price: 0.94 €
     
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FET - Transistor N-MOSFET 30V 9.7A 2.0W SO8

Prod code: 2963
IRF8313PBF PDF

IRF8313PBF
Price:  0.76 €
VAT:  0.18 €
Final price with tax:  0.94 €
Amount:   
Warning Long delivery time
Specifications
Manufacturer INTERNATIONAL RECTIFIER
Transistor type N-MOSFET x2
Polarisation unipolar
Transistor kind HEXFET
Drain-source voltage 30V
Drain current 9.7A
Power 2W
Case SO8
Gate-source voltage 20V
On-state resistance 15.5mŮ
Junction-to-ambient thermal resistance 62.5K/W
Mounting SMD
Gate charge 6nC
 
Availability: With order
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Manufacturers: --- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
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