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  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Transistor N-MOSFET 30V 9.7A 2.0W SO8  [Είσοδος
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Transistor N-FET - Transistor  N-JFET, unipolar, 35V, 2mA, 0.625W, TO92, Igt  50mA
Transistor N-FET - Transistor N-JFET, unipolar, 35V, 2mA, 0.625W, TO92, Igt 50mA
Τελική: 2.26 €
     
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Transistor N-FET - Transistor  N-MOSFET, unipolar, 500V, 8A, Idm  52A, 48W, TO220FP
Transistor N-FET - Transistor N-MOSFET, unipolar, 500V, 8A, Idm 52A, 48W, TO220FP
Τελική: 4.32 €
     
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FET - Transistor N-MOSFET 30V 9.7A 2.0W SO8

Κωδικός: 2963

IRF8313PBF PDF

IRF8313PBF

Τιμή χωρίς ΦΠΑ:  0.76 €
Αξία ΦΠΑ:  0.18 €
Τελική με ΦΠΑ:  0.94 €
Ποσότητα:   
Προειδοποίηση Μεγάλος χρόνος παράδοσης
Specifications
Manufacturer INTERNATIONAL RECTIFIER
Transistor type N-MOSFET x2
Polarisation unipolar
Transistor kind HEXFET
Drain-source voltage 30V
Drain current 9.7A
Power 2W
Case SO8
Gate-source voltage 20V
On-state resistance 15.5mΩ
Junction-to-ambient thermal resistance 62.5K/W
Mounting SMD
Gate charge 6nC
 
Διαθεσιμότητα: Με παραγγελία
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Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
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