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  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Transistor N-MOSFET 30V 21A 2,5W SO8  [Είσοδος
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Transistor N-MOSFET - Transistor  N-MOSFET, MDmesh™ ||, unipolar, 600V, 6.93A, 25W
Transistor N-MOSFET - Transistor N-MOSFET, MDmesh™ ||, unipolar, 600V, 6.93A, 25W
Τελική: 2.79 €
     
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FET - Module, single transistor, 40V, 660A, SOT227B, Ugs  ±15V, screw
FET - Module, single transistor, 40V, 660A, SOT227B, Ugs ±15V, screw
Τελική: 36.77 €
     
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FET - Transistor N-MOSFET 30V 21A 2,5W SO8

Κωδικός: 3036

IRF7862PBF PDF

IRF7862PBF

Specifications
Manufacturer INTERNATIONAL RECTIFIER
Transistor type N-MOSFET
Polarisation unipolar
Transistor kind HEXFET
Drain-source voltage 30V
Drain current 21A
Power 2.5W
Case SO8
Gate-source voltage 20V
On-state resistance 3.3mΩ
Junction-to-ambient thermal resistance 50K/W
Mounting SMD
Gate charge 30nC
 
Διαθεσιμότητα: Προειδοποίηση Μεγάλος χρόνος παράδοσης
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Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TOSHIBA | VISHAY
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