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  Catalog » Semiconductors » Transistor / Fet » FET : Transistor N-MOSFET 30V 13,6A 2,5W SO8  [Log In
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FET - Transistor N-MOSFET 75V 80A 200W TO220AB
FET - Transistor N-MOSFET 75V 80A 200W TO220AB
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Transistor P-FET - Transistor  P-MOSFET x2, unipolar, -60V, -3.9A, Idm  -32A, 1.2W, SO8
Transistor P-FET - Transistor P-MOSFET x2, unipolar, -60V, -3.9A, Idm -32A, 1.2W, SO8
Final price: 1.00 €
     
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FET - Transistor N-MOSFET 30V 13,6A 2,5W SO8

Prod code: 2984

IRF7821PBF PDF

IRF7821PBF

Specifications
Manufacturer INTERNATIONAL RECTIFIER
Transistor type N-MOSFET
Polarisation unipolar
Transistor kind HEXFET
Drain-source voltage 30V
Drain current 13.6A
Power 2.5W
Case SO8
Gate-source voltage 20V
On-state resistance 9.1mŮ
Junction-to-ambient thermal resistance 50K/W
Mounting SMD
Gate charge 9.3nC
 
Availability: Warning Long delivery time
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Manufacturers--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
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