Specifications |
Manufacturer |
INTERNATIONAL RECTIFIER |
Transistor type |
N-MOSFET |
Polarisation |
unipolar |
Transistor kind |
HEXFET |
Drain-source voltage |
200V |
Drain current |
65A |
Power |
190W |
Case |
TO220AB |
Gate-source voltage |
30V |
On-state resistance |
26mΩ |
Junction-to-case thermal resistance |
450mK/W |
Mounting |
THT |
Gate charge |
70nC |
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