Specifications |
Manufacturer |
INTERNATIONAL RECTIFIER |
Transistor type |
N-MOSFET |
Polarisation |
unipolar |
Transistor kind |
HEXFET |
Drain-source voltage |
200V |
Drain current |
18A |
Power |
150W |
Case |
TO262 |
Gate-source voltage |
20V |
On-state resistance |
150mŮ |
Junction-to-case thermal resistance |
1K/W |
Mounting |
THT |
Gate charge |
44.7nC |
|
|