Specifications |
Manufacturer |
INTERNATIONAL RECTIFIER |
Transistor type |
N-MOSFET |
Polarisation |
unipolar |
Transistor kind |
HEXFET |
Drain-source voltage |
100V |
Drain current |
8.7A |
Power |
35W |
Case |
DPAK |
Gate-source voltage |
20V |
On-state resistance |
190mŮ |
Junction-to-case thermal resistance |
4.28K/W |
Mounting |
SMD |
Gate charge |
6.9nC |
|
|