Specifications |
Manufacturer |
BASiC SEMICONDUCTOR |
Type of transistor |
IGBT |
Technology |
Field Stop, |
Collector-emitter voltage |
650V |
Collector current |
50A |
Power dissipation |
357W |
Case |
TO247-3 |
Gate-emitter voltage |
±20V |
Pulsed collector current |
200A |
Mounting |
THT |
Gate charge |
308nC |
Kind of package |
tube |
Turn-on time |
54ns |
Turn-off time |
256ns |
Features of semiconductor devices |
integrated anti-parallel diode |
|
|