Specifications |
Manufacturer |
IXYS |
Type of transistor |
IGBT |
Technology |
GenX4™, |
Collector-emitter voltage |
650V |
Collector current |
110A |
Power dissipation |
880W |
Case |
TO264 |
Gate-emitter voltage |
±20V |
Pulsed collector current |
570A |
Mounting |
THT |
Gate charge |
183nC |
Kind of package |
tube |
Turn-on time |
65ns |
Turn-off time |
250ns |
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