Specifications |
Manufacturer |
STMicroelectronics |
Type of transistor |
IGBT |
Collector-emitter voltage |
650V |
Collector current |
80A |
Power dissipation |
470W |
Case |
TO247-3 |
Gate-emitter voltage |
±20V |
Pulsed collector current |
300A |
Mounting |
THT |
Gate charge |
414nC |
Kind of package |
tube |
Features of semiconductor devices |
integrated anti-parallel diode |
Gross weight |
4.55 g |
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