|
Specifications |
| Manufacturer |
STMicroelectronics |
| Type of transistor |
IGBT |
| Collector-emitter voltage |
650V |
| Collector current |
40A |
| Power dissipation |
283W |
| Case |
TO3P |
| Gate-emitter voltage |
±30V |
| Pulsed collector current |
160A |
| Mounting |
THT |
| Gate charge |
0.21µC |
| Kind of package |
tube |
| Features of semiconductor devices |
integrated anti-parallel diode |
| |
|
Αισθητήρια
Hμιαγωγοί
DC-DC Converters
Καθαριστικά - Χημικά
