Specifications |
Manufacturer |
TOSHIBA |
Type of transistor |
IGBT |
Collector-emitter voltage |
600V |
Collector current |
44A |
Power dissipation |
115W |
Case |
TO3PN |
Gate-emitter voltage |
±25V |
Pulsed collector current |
100A |
Mounting |
THT |
Kind of package |
tube |
Turn-on time |
250ns |
Turn-off time |
330ns |
Gross weight |
4.84 g |
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