Specifications |
Manufacturer |
TOSHIBA |
Type of transistor |
IGBT |
Collector-emitter voltage |
600V |
Collector current |
30A |
Power dissipation |
170W |
Case |
TO3PN |
Gate-emitter voltage |
±20V |
Pulsed collector current |
60A |
Mounting |
THT |
Kind of package |
tube |
Turn-on time |
240ns |
Turn-off time |
430ns |
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